A thin film field effect transistor device, based upon Graphene/MoS2 heterostructures, will be fabricated by a novel combination of PVD and Aerosol Jet Printing methods. will be used to fabricate a field effect transistor. Sophisticated analytical methods like X-ray reflectivity measurements, scanning transmission electron microscopy and focused ion beam preparation will be used to characterize the thickness, structure and homogeneity of the layers within the device. The project should pave the way for developments of cheap and flexible electronic devices in ICT within joint actions of research organisations and companies in Austria and neighbouring countries.
