Vertikale verspannte 1D Siliziumnanostrukturen und Bauteile

01.03.2005 - 30.09.2008
Research funding project
Elucidating ¿Vertical strained 1D silicon Nanostructures and Devices¿ is a complex task, which requires an interdisciplinary consortium capable of addressing all relevant issues from metal nanoparticle template formation, 1D silicon nanostructure growth, analysis of mechanical and electrical properties and device formation. In this proposal we suggest therefore a transnational cooperation between the Max-Planck-Institute of Microstructure Physics (MPI), Halle (D), the Institute for Solid State Physics (IFK), Jena (D), the Materials Measurement Research Group (EMPA), Thun (CH), the Nanostructure Research Group (EPFL) in Lausanne (CH) and the Institute for Solid State Electronics (FKE), Wien (A). Initially, we will synthesize 1D silicon nanostructures at specific sites with well-defined lengths and diameters using the metal catalysed so called vapor-liquid-solid growth process. The positioning of the metal (Ga, Au, Al) nanoparticles will be carried out using ion beam techniques. In situ SEM observation in combination with in-situ electrical testing and nano-manipulation devices will be used to explore the growth mechanisms and the electronic and mechanical properties of the 1D nanostructures. In a second step we will integrate the 1D nanostructures in devices such as pn-junctions and vertical field-effect-transistors (FETs). For this purpose several aspects of contact formation as well as abrupt pn-junction formation and the deposition of dielectrics have to be solved. Different, partly self-aligned processes of contact formation via wafer bonding will be exploited. From realized assemblies of multiple 1D nanostructures in vertical functional test structures such as pn-junctions and field-effect transistors, we will extract their fundamental electrical properties. With the ability to apply strain to individual 1D silicon nanostructures and their assemblies, we will investigate the effect of strain on the electrical properties. The consortium will provide for the required competences: MPI/ IFK: growth of 1D silicon nanostructures, wafer bonding, structural characterization, FKE: nano-template synthesis, 1D nanodevice processing and characterization, EMPA/EPFL: in-situ SEM studies for 1D silicon nanostructure formation, electronic and mechanical properties characterization, in-situ straining of 1D nanostructures by nanomanipulators in the SEM.

People

Project leader

Project personnel

Institute

Grant funds

  • FWF - Österr. Wissenschaftsfonds (National) Austrian Science Fund (FWF)

Research focus

  • Special and Engineering Materials: 20%
  • Structure-Property Relationsship: 20%
  • Nano-electronics: 20%
  • Surfaces and Interfaces: 20%
  • Materials Characterization: 20%

Keywords

GermanEnglish
Nanostrukturen Nano structures
Nanodrähtenanowire
eindimensionaler MOSFETone dimensionalMOSFET

External partner

  • Max Planck Institut für Mikrostrukturphysik
  • Eidgenössiche Material und Prüfanstalt

Publications