Radiation Hardness of Silicon Nano Structures

01.09.2006 - 31.12.2007
Research funding project
Within the scope of the proposed feasibility study new methods for the safety of semiconductor devices are examined in order to protect them from the hazardous effects of ionising and high energy radiation. For two selected semiconductor devices (pn-test structure, memory device) Monte-Carlo simulation models will be developed to describe the absorbed energy within nano-structures of silicon. The selected semiconductor devices will be exposed in well defined standard radiation fields. The performance of the semiconductors during and after the irradiation will be examined. The simulation models will be validated by these experimental results. The simulation models can be used for the prediction of changes and interaction processes within silicon nanostructures exposed to ionising and high energy particle radiation. The gathered knowledge is needed to derive safety procedures for the manufacture process and shielding concepts. The Austrian semiconductor industry is very interested in both the project and the results.

People

Project leader

Project personnel

Institute

Grant funds

  • FFG - Österr. Forschungsförderungs- gesellschaft mbH (National) Austrian Research Promotion Agency (FFG)

Research focus

  • Modeling and Simulation: 100%

Keywords

GermanEnglish
Halbleiter-Bauelementesemiconductor devices
Monte-Carlo-SimulationMonte Carlo simulation
Strahlungradiation

External partner

  • Seibersdorf Labor GmbH
  • austriamicrosystems

Publications