Total Reflection X-ray Fluorescence Analysis (TXRF) is a special method of energy dispersive X-ray Fluorescence Analysis extending the analytical power to the ultra trace element range (Detection limits in the pg (10-12 g range) with X-ray tube excitation. When performed at Synchrotron radiation (SR) sources with a multilayer monochromator, itallows to achieve detection limits down to the fg(10-15 g) range. Using a high resolution crystal monochromator instead of a multilayer monochromator X-Ray Absorption spectroscopy (XANES, EXAFS) can be performed allowing speciation of trace elements and determination of their chemical environment. Measuring the angle dependence of the fluorescence signal the method is called GIXRF (Grazing incidence XRF), which is a powerful technique for non-destructive depth-profiling especially sensitive to near surface layers and characterization of thin layers up to a few hundred nanometers. GIXRF provides information on depth distribution and total dose of the elements in the layers. A combination of the GI-XRF with absorption spectroscopy allows to gain information on the local structure of the element of interest and an insight in the physical/chemical properties related to its incorporation in the material (e.g. electrical activity in microelectronics related ion implants).. Aim of the project: • SRTXRF-XANES: Determination of Rhodium oxidation state in Rh treated cancer cells (cooperation with Prof. G. Zaray, and Dr. N. Szoboszlai from ELTE Budapest and Dr. K. Appel from HASYLAB@DESY, Hamburg). The TXRF-XANES results will help to understand the mechanism of the biological effect of Rh complexes and to study the antitumor activity and toxicity of the different complexes. • GIXRF of As implants for ultra shallow junctions (cooperation with Dr. G. Pepponi and D.I. Dr. F. Meirer from FBK-irst, Trento and Prof. P. Pianetta, SSRL, California). Determination of degree of dopant activation achieved by the current implantation and annealing techniques. GIXRF-EXAFS/XANES will be used to analyze the local coordinate structure around As ions. • GI-XRF + X-ray reflectivity (XRR) - thin layer analysis (coop: Dr. Pepponi, Dr. Meirer, Dr. Morales from CIMAP, ENSICAEN, Caen, France, Dr. J. Göttlicher from ANKA, Karlsruhe, Germany, and Dr.Appel). The measurement setup, protocol (for lab and SR measurements) and the evaluation software should be developed to use GIXRF + XRR for the comprehensive non=destructive analysis of thin layers on wafer material for semiconductor application (high k material) as well as rare earth doped Silicon rich oxide films that could help to increase the efficiency of thin film solar cells.