ALD of nanoscale films on silicon nanowires

01.08.2007 - 31.07.2010
Research funding project
The main objective of this project is to explore ALD-grown thin film/Si-nanowire surfaces and their corresponding transition regions. By investigating the material- and electric properties, basic understanding of the influence of ultra-thin dielectrics as well as electric contacts on as-grown, quasi 1-D nanowires shall be gained. For this purpose an assembly of test modules will be generated, enabling to explore the morphological, physical, chemical and electrical parameters. Ultra-thin (a few nm thick) dielectric layers (Al2O3, HfO2, ZrO2, and rare-earth metal oxides) will be deposited by ALD. Different metal electrodes or contacting layers (TiN, W and Pt) will play a key role in the various devices. Deposition- and growth processes will be investigated on their thermodynamical behaviour during different thermal processing steps. A qualitatively and quantitatively classification by physico-chemical and electrical characterization techniques supported by modelling and simulation will sustain data extraction. Hereby, national and international cooperation containing processing, characterization and modelling, will support the project progress and intense networking.

People

Project leader

Project personnel

Institute

Grant funds

  • FWF - Österr. Wissenschaftsfonds (National) Austrian Science Fund (FWF)

Research focus

  • Special and Engineering Materials: 5%
  • Structure-Property Relationsship: 10%
  • Nano-electronics: 60%
  • Sustainable and Low Emission Mobility: 5%
  • Surfaces and Interfaces: 10%
  • Materials Characterization: 10%

Keywords

GermanEnglish
Hochpermittive DielektrikaNanoscale high k Dielectrics
Silizium-NanodrähteSilicon Nanowires
Atomare SchichtabscheidungAtomic Layer Deposition
Nanskalen-BauelementeNanoscale Devices

Publications