366.086 Materials, processes and technologies for MEMS
This course is in all assigned curricula part of the STEOP.
This course is in at least 1 assigned curriculum part of the STEOP.

2019S, VU, 2.0h, 3.0EC

Properties

  • Semester hours: 2.0
  • Credits: 3.0
  • Type: VU Lecture and Exercise

Aim of course

State of the art of silicon carbide based devices and systems applying micro- and nanomachining.

Subject of course

This course will focus on the carbide materials, especially on silicon carbide (SiC). SiC is a material of growing importance in the field of MEMS and microelectronic applications. The course is divided into the following chapters: 

Deposition techniques
Besides the production methods for bulk SiC, special techniques such as LPCVD and PECVD for the deposition of polycrystalline or amorphous SiC thin films as well as homo and hetero epitaxy for the deposition of single crystalline 6H-SiC and 3C-SiC layers will be covered. Doping of SiC with respect to microelectronic applications will be subject of the course as well.

Material properties
SiC exhibits extraordinary thermal, electrical, chemical, mechanical and structural properties, all of which will be presented. Additionally, advanced optical and electrical characterization methods such as DLTS will be explained.

patterning and functionalisation
Besides the well known methods for thin film patterning such as wet and dry etching, electrochemical techniques for porosification of SiC thin films will be a main focus. Controlled oxidation of the SiC surface can be used as hard mask for ion implantation, passivation purposes or as an insulating layer in regard to semiconductor electronic applications.

applications in microelectronics
In this chapter, the implementation of SiC into MOSFET/MESFET/JFET and diode structures will be discussed as well as the importance of SiC in regard to high power electronics and opto electronics.

Applications in MEMS
Besides its use in electronics, SiC is increasingly used in MEMS devices due to its excellent mechanical and thermal properties. In this course, devices like SiC based MEMS microphones, sensors for harsh environments (for temperature, gas or pressure sensing) and micro hot plates for chemical sensors will be discussed.

Lecturers

Institute

Course dates

DayTimeDateLocationDescription
Tue09:00 - 10:0005.03.2019 Meetingroom ISAS, Gusshausstrasse 27-29, Room CB0102Preliminary lecture
Tue08:30 - 10:0030.04.2019 - 25.06.2019 Meetingroom ISAS, Gusshausstrasse 27-29, Room CB0102Lecture
Materials, processes and technologies for MEMS - Single appointments
DayDateTimeLocationDescription
Tue05.03.201909:00 - 10:00 Meetingroom ISAS, Gusshausstrasse 27-29, Room CB0102Preliminary lecture
Tue30.04.201908:30 - 10:00 Meetingroom ISAS, Gusshausstrasse 27-29, Room CB0102Lecture
Tue07.05.201908:30 - 10:00 Meetingroom ISAS, Gusshausstrasse 27-29, Room CB0102Lecture
Tue14.05.201908:30 - 10:00 Meetingroom ISAS, Gusshausstrasse 27-29, Room CB0102Lecture
Tue21.05.201908:30 - 10:00 Meetingroom ISAS, Gusshausstrasse 27-29, Room CB0102Lecture
Tue28.05.201908:30 - 10:00 Meetingroom ISAS, Gusshausstrasse 27-29, Room CB0102Lecture
Tue04.06.201908:30 - 10:00 Meetingroom ISAS, Gusshausstrasse 27-29, Room CB0102Lecture
Tue18.06.201908:30 - 10:00 Meetingroom ISAS, Gusshausstrasse 27-29, Room CB0102Lecture
Tue25.06.201908:30 - 10:00 Meetingroom ISAS, Gusshausstrasse 27-29, Room CB0102Lecture

Examination modalities

Following the course, there will be a oral exam.

Course registration

Begin End Deregistration end
07.03.2019 08:00 20.03.2019 23:59

Curricula

Literature

No lecture notes are available.

Language

if required in English