This course will focus on the carbide materials, especially on silicon carbide (SiC). SiC is a material of growing importance in the field of MEMS and microelectronic applications. The course is divided into the following chapters:
Deposition techniques
Besides the production methods for bulk SiC, special techniques such as LPCVD and PECVD for the deposition of polycrystalline or amorphous SiC thin films as well as homo and hetero epitaxy for the deposition of single crystalline 6H-SiC and 3C-SiC layers will be covered. Doping of SiC with respect to microelectronic applications will be subject of the course as well.
Material properties
SiC exhibits extraordinary thermal, electrical, chemical, mechanical and structural properties, all of which will be presented. Additionally, advanced optical and electrical characterization methods such as DLTS will be explained.
patterning and functionalisation
Besides the well known methods for thin film patterning such as wet and dry etching, electrochemical techniques for porosification of SiC thin films will be a main focus. Controlled oxidation of the SiC surface can be used as hard mask for ion implantation, passivation purposes or as an insulating layer in regard to semiconductor electronic applications.
applications in microelectronics
In this chapter, the implementation of SiC into MOSFET/MESFET/JFET and diode structures will be discussed as well as the importance of SiC in regard to high power electronics and opto electronics.
Applications in MEMS
Besides its use in electronics, SiC is increasingly used in MEMS devices due to its excellent mechanical and thermal properties. In this course, devices like SiC based MEMS microphones, sensors for harsh environments (for temperature, gas or pressure sensing) and micro hot plates for chemical sensors will be discussed.
