After successful completion of the course, students are able to understand the physics of low dimwnsional electron systems. Beware, this topic is complex and needs a lot of basic knowledge. For students in higher semesters only, I would say.

This lecture provides an introduction to the physical properties of semiconductor devices in the nanometer range and to the physics of low-dimensional electron systems. A section on manufacturing processes of nanostructures teaches the basics of electron beam lithography, laser holography and reactive ion etching. In the section on electronic properties of nanostructures, effects relevant for the use in future devices are discussed, e.g. single electron transistors, sub-µm tunnel diodes or transistors with modulated gate regions. To understand the characteristics of such nanostructures, lateral and vertical transport effects are discussed. Lateral transport is mainly used to determine the energy levels in nanostructures. Individual methods are explained in detail, including ballistic transport effects. Vertical transport is mainly related to the physical properties of tunnel diodes in the nanometer range. Here, nanostructuring leads to selection rules for tunnel processes, which has a significant influence on the characteristic curves of these diodes. Numerical methods for modelling these systems are also presented. 

Please read the lecture note 'Haegrula II', and understand it (german only)

https://owncloud.tuwien.ac.at/index.php/s/mU1ofkSVximexOg

Oral Examination.

Bitte anmelden, damit ich weiss, mit wie vielen Leuten ich rechnen kann, DANKE!

Beste Grüße, Jürgen Smoliner