After introductory lectures on micro and nanoelectronics (Moore's law, process technology, TCAD, new MOSFETs) groups of participants perform TCAD simulations of a semiconductor device (32nm MOSFET, process and device simulation). A simulation template is given to the students which has to be modified in order to study certain effects. Afterwards, lectures will be given on further topics in the field of nanoelectronics and information technology is presented (new device concepts, semiconductor memories, sensors, displays, mass storage). They prepare for possible bachelor theses.
The practical work will be done in November. Dates and times will be announced in class. The final exam can only be taken after successful completion of the practical work. If you have given a presentation, unless you have received other feedback, you have passed the practical work.
Handouts of the presented slides are provided in TISS while the course advances.
R. Waser, Nanoelectronics and Information Technology, Advanced Electronic Materials and Novel Devices, Wiley-VCH, 3rd Edition, 2012.