Understanding of the fabrication and the properties of integrated electron devices and circuits. First insight into the possibilities of modern simulation tools. Overview of the most important trends in nanotechnology including topics currently investigated at our institute.

After introductory lectures on micro and nanoelectronics (Moore's law, process technology, TCAD, new MOSFETs) groups of participants perform TCAD simulations of a semiconductor device (process or device simulation). Emphasis is more on the illustration of current technology (e.g. 32nm MOSFET) than on the operation of the simulation software. Afterwards, lectures will be given on further topics in the field of nanoelectronics and information technology is presented (new device concepts, semiconductor memories, sensors, displays, mass storage). They prepare for possible bachelor theses.

The practical work will be done in November. Dates and times will be announced in class.

Presentation of the results from practical work in class and oral exam after the end of course.

Handouts of the presented slides are provided in TISS while the course advances.

R. Waser, Nanoelectronics and Information Technology, Advanced Electronic Materials and Novel Devices, Wiley-VCH, 3rd Edition, 2012.
Y. Taur, T.H. Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press, 2nd Edition, 2009.