Testing of semiconductor devices is important in new technology development and debugging, quality control, reliability and lifetime prediction of IC. Experimental methods for device and IC testing are also necessary for verification of results of device or circuit simulation. The students will gain a practical and theoretical knowledge on advanced non-invasive testing methods for evaluation of temperature, voltage and electrical current signals in devices and circuits.

In the first part of lecture, the basics about different modes of IC and device failure will be presented. Then methods for physical failure localization and identification are introduced. The general overview includes scanning probe techniques (Atomic Force Microscopy based methods, scanning capacitance profiling, Kelvin probe microscopy,..), FIB (focus ion beam), electron beam testing, liquid crystal thermal mapping,... The focus of the lecture will be given on non-destructive optical methods. Methods for non-contact analysis of voltage and self-heating effect (the main failure cause of power devices) will be presented. These methods includes emission microscopy, micro-Raman imaging, scanning pholuminescence, optical beam induced voltage or current mapping,... Methods based on probing refractive index or absorption changes with temperature and free carrier concentration, including nanosecond transient interferometric mapping (TIM) method developed at FKE TUW, will be presented in details. Different examples of device/circuit testing relevant for industry will be discussed (fault localization, microprocessor debugging, thermal mapping during electrostatic discharge event, ).

Please send me an email and then we define the lecture termin

please send me an email to dionyz.pogany@tuwien.ac.at

The lecture starts in the beginning of March.

The time of the lecture will be defined after agreement between the lecturer and  students