362.074 CVD processes for nanoscale MOSFETS
This course is in all assigned curricula part of the STEOP.
This course is in at least 1 assigned curriculum part of the STEOP.

2019S, PR, 8.0h, 8.0EC

Properties

  • Semester hours: 8.0
  • Credits: 8.0
  • Type: PR Project

Aim of course

Knowledge of gas phase deposition for silicon evices

Subject of course

Gas pase epitaxy is a key technology for the fabrication of silicon devices. The principles will be teached in a cleanroom labcourse.

Lecturers

Institute

Course registration

Registration modalities

Floragasse 7/I Ort: persönlich

Curricula

Literature

No lecture notes are available.

Accompanying courses

Miscellaneous

  • Attendance Required!

Language

German