360.238 Experimental Device Characterization in Microelectronics
This course is in all assigned curricula part of the STEOP.
This course is in at least 1 assigned curriculum part of the STEOP.

2021W, SE, 2.0h, 3.0EC
TUWEL

Properties

  • Semester hours: 2.0
  • Credits: 3.0
  • Type: SE Seminar
  • Format: Hybrid

Learning outcomes

After successful completion of the course, students are able to

  • explain degradation mechanisms in microelectronic devices like bias temperature instability and hot carrier degradation, which are caused by defects.
  • characterize defects in devices with electrical measurement methods (charge pumping, CV measurements, single-defect spectroscopy).
  • design circuits and measurement setups for defect characterization by themselves.
  • program automated measurement sequences and data processing.

Subject of course

Modern microelectronic devices, such as transistors, have characteristic dimensions of only a few nanometers, which leads to a reduced power consumption of single devices, while at the same time allowing an increased number of devices per unit area. Notwithstanding the vast number of advantages, reliability issues like Bias Temperature Instability and Hot Carrier Degradation play an important adverse role in these structures. Broadly speaking, these effects rely on single defects in the microscopic structure which can emerge or be deactivated during normal device operation. When charged, these defects exhibit a detrimental impact on the device characteristics and thus negatively affect the device lifetime. The single charging and discharging events of such defects occur extremely fast and their impact can be difficult to defect. This behavior poses a very interesting challenge for their experimental characterization and detection. Considering general-purpose instruments, single defects can hardly be analyzed at the required level of detail and thus do not lead to very satisfying results.

This lecture is focused on tackling current issues in defect spectroscopy and the reliability of microelectronic devices. This especially covers the following tasks:

  • Experimental analysis of single defects in transistors.
  • Further development of existing measurement setups.
  • Hardware and software development, ethernet, touch-display.
  • Programming of FPGAs and microprocessors.
  • Implementation of analysis software tools using Python or C/C++.
  • Literature study.

Teaching methods

Work on a practical project, frequent discussions with the supervisor, presentation of the final results.

Mode of examination

Immanent

Additional information

Time: Monday, 14:15

Location: Zoom Meeting, https://tuwien.zoom.us/j/98911946351

Start: Monday, October 11th, 14:15

Please consider the plagiarism guidelines of TU Wien when writing your seminar paper: Directive concerning the handling of plagiarism (PDF)

Lecturers

Institute

Course dates

DayTimeDateLocationDescription
Mon14:15 - 15:0011.10.2021 https://tuwien.zoom.us/j/98911946351 (LIVE)Vorbesprechung

Examination modalities

Presentation and discussion of project.

Course registration

Begin End Deregistration end
06.09.2021 08:00 18.10.2021 23:59 18.10.2021 23:59

Curricula

Literature

No lecture notes are available.

Language

German