360.233 Microelectronic Relibility: Devices
This course is in all assigned curricula part of the STEOP.
This course is in at least 1 assigned curriculum part of the STEOP.

2019W, VU, 2.0h, 3.0EC


  • Semester hours: 2.0
  • Credits: 3.0
  • Type: VU Lecture and Exercise

Learning outcomes

After successful completion of the course, students are able to

  • discuss essential differences between idealized and real electronic devices.
  • describe degradation mechanisms in real devices with physics based models.
  • critically evaluate the state-of-the-art research on device reliability.
  • assess various reliability models regarding their applicability.

Subject of course

Keywords: idealized vs. real device behavior, variability, ideal crystals and interfaces vs. real structures, defects, fundamentals of defect physics, fundamentals of chemical reactions and stochastic/deterministic modeling methods, interactions of defects with devices, important degradation phenomena: negative/positive bias temperature instability (NBTI/PBTI), hot carrier degradation, time-dependent dielectric breakdown (TDDB), noise (random telegraph noise (RTN), 1/f noise).

Teaching methods

Lectures, calculation and simulation exercises with a discussion of the results

Mode of examination




Examination modalities

Oral examination after positive review of the practical part - registration in TISS.

Course registration

Begin End Deregistration end
30.08.2019 00:00 04.10.2019 00:00 25.10.2019 01:00



Die Unterlagen befinden sich unter


Previous knowledge

Kenntnisse in Quantenmechanik werden erwartet (VU Quantenelektronik, 360.227)

Preceding courses