The main aim of the course is the realization that standard courses typically deal with idealized devices. Real devices are different in various ways, for instance, their topologies are non-planar and their doping profiles deviate from a simple abrupt or Gaussian form. However, even nominally identical devices will behave differently, due to unavoidable variability. Most importantly, devices and circuits will change under operation. These changes typically lead to a deterioration of the figures of merit until complete failure. While many of these degradation mechanisms are not fully understood, their importance increase with each technology node. This lecture aims at teaching the most important theoretical basics related to this wide field, which allow for a critical examination of the ever-changing state of the art.
Keywords: idealized vs. real device behavior, variability, ideal crystals and interfaces vs. real structures, defects, fundamentals of defect physics, fundamentals of chemical reactions and stochastic/deterministic modeling methods, interactions of defects with devices, important degradation phenomena: negative/positive bias temperature instability (NBTI/PBTI), hot carrier degradation, time-dependent dielectric breakdown (TDDB), noise (random telegraph noise (RTN), 1/f noise).
Die Unterlagen befinden sich unter
https://tgras.iue.tuwien.ac.at/owncloud/public.php?service=files&t=4d0174cdf5fa53bebf48b419b17aa0ea
