After successful completion of the course, students are able to

• describe material and structural degradation mechanisms in modern 3D integrated circuits.
• physically model device degradation.
• optimize the reliability of integrated circuits by using TCAD software packages.

Fundamentals of metallization and interconnect manufacturing, mechanical and electrical degradation, evaluation methodology of reliability aspects, statistical analysis of the failure behavior, studies on microstructural aspects of polycrystalline metallization, mechanical degradation of the inter-metal dielectric, reliability problems of interconnect structures for 3D integration (through-silicon-vias / solder bumps), the physical basis of electromigration and stressmigration, modeling of electromigration and stressmigration, TCAD analysis of electromigration and stressmigration as well as the optimization of metallization and interconnect structures.

Lectures, in-depth study of a subtopic with subsequent presentation.

Time and Location:
Tuesday, 14:00 - 16:00
Seminar room E360, Gußhausstraße 27-29, Stiege 1, 5th floor, room no. CD 0520
Preliminary talk and begin: March 8th, 2022

Oral test after positive submission of the seminar work.