360.232 Process Reliability in Microelectronics
This course is in all assigned curricula part of the STEOP.
This course is in at least 1 assigned curriculum part of the STEOP.

2022S, VU, 2.0h, 3.0EC

Properties

  • Semester hours: 2.0
  • Credits: 3.0
  • Type: VU Lecture and Exercise
  • Format: Presence

Learning outcomes

After successful completion of the course, students are able to

  • describe material and structural degradation mechanisms in modern 3D integrated circuits.
  • physically model device degradation.
  • optimize the reliability of integrated circuits by using TCAD software packages.

Subject of course

Fundamentals of metallization and interconnect manufacturing, mechanical and electrical degradation, evaluation methodology of reliability aspects, statistical analysis of the failure behavior, studies on microstructural aspects of polycrystalline metallization, mechanical degradation of the inter-metal dielectric, reliability problems of interconnect structures for 3D integration (through-silicon-vias / solder bumps), the physical basis of electromigration and stressmigration, modeling of electromigration and stressmigration, TCAD analysis of electromigration and stressmigration as well as the optimization of metallization and interconnect structures.

Teaching methods

Lectures, in-depth study of a subtopic with subsequent presentation.

Mode of examination

Oral

Additional information

Time and Location:
Tuesday, 14:00 - 16:00
Seminar room E360, Gußhausstraße 27-29, Stiege 1, 5th floor, room no. CD 0520
Preliminary talk and begin: March 8th, 2022


Lecturers

Institute

Examination modalities

Oral test after positive submission of the seminar work.

Course registration

Begin End Deregistration end
07.02.2022 20:00 06.03.2022 23:00 06.03.2022 23:00

Curricula

Literature

No lecture notes are available.

Language

German