The students receive an insight into modern high-performance MOSFETs for ultra large scale integration. Special emphasis is put on performance enhancement of current CMOS devices by applying stress and exploring novel design (SOI, Fin and nanowire FETs, single, double, and 3D tri-gate devices, junction-free MOSFETs) as well FETs with germanium and III-V semiconductor high-mobility channels.
Electron spin is considered as an alternative to the charge degree of freedom for non-volatile storage and information processing. Special emphasis is put on the physical description of the operation of spin FET, spin MOSFET and other spin transistors. Approaches to reduce spin relaxation in silicon are considered. Spin is also used to develop new types of memories. Magnetization direction in modern magnetic tunnel junctions can be switched fast by purely electrical means. This makes spin transfer torque magnetic memory a perfect candidate to replace CMOS in future static and dynamic random access memories. A great advantage of the new memory is that it does not need refreshing. As in other types of resistive non-volatile memories, magnetic memory preserves its state even when the power is off.
New ideas for spin switches and memories including those based on domain wall motion and giant spin Hall effect are considered. The concepts of spin communication, use of anti-ferromagnetic materials and topological insulators for spintronics applications are described.
Time: Thursday, 10:00 - 12:00
Location: E360 Room number CD 0513
Start: 03-March-2021
