360.035 Nanostructure devices in ULSI circuits for PhD students
This course is in all assigned curricula part of the STEOP.
This course is in at least 1 assigned curriculum part of the STEOP.

2021W, SE, 2.0h, 2.0EC

Properties

  • Semester hours: 2.0
  • Credits: 2.0
  • Type: SE Seminar
  • Format: Hybrid

Learning outcomes

After successful completion of the course, students are able to

  • understand the working principles of ultra-highly integrated semiconductor devices.
  • calculate variations of characteristic device parameters during the manufacturing process using simulation software.
  • estimate the impact of these variations on the device functionality.

Subject of course

Semiconductor devices within ULSI circuits are presented by means of selected examples. Variations of characteristic parameters of these devices are described by using modern simulation techniques.

Teaching methods

Definition of a specific project, independent solving of the given problems.

Mode of examination

Oral

Additional information

Please consider the plagiarism guidelines of TU Wien when writing your seminar paper: Directive concerning the handling of plagiarism (PDF)

Lecturers

Institute

Examination modalities

Weekly discussions, presentation of the results with a talk.

Course registration

Not necessary

Curricula

Literature

No lecture notes are available.

Previous knowledge

Completed diploma or master study

Language

German