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2024S, VU, 2.0h, 3.0EC

## Properties

• Semester hours: 2.0
• Credits: 3.0
• Type: VU Lecture and Exercise
• Format: Presence

## Learning outcomes

After successful completion of the course, students are able to

• describe the physical and mathematical basics of numerical device simulation.
• apply the most important numerical methods like discretization, Newton’s method and equation solvers.
• qualitatively estimate the validity of various transport models.
• implement  software for the numerical simulation of elementary devices.

## Subject of course

The electrical behavior of modern semiconductor devices can only be qualitatively modeled using analytical models. To obtain better descriptions the semiconductor device equations have to be solved numerically on a suitable simulation grid. This course focuses on the basic physical and mathematical issues. Practical experience can be gathered using a real device simulator. Modeling: Boltzmann's equation, moment method, drift-diffusion and energy-transport models. Boundary conditions, contacts, interfaces and heterostructures. Self heating and the heat flow equation, thermal boundary conditions. Band structure, strain effects, modeling of semiconductor alloys, mobility, scattering, channel quantization. Numerical methods: discretization of partial differential equations (finite difference and box-integration method), damping and convergence of Newton's method, linearized small-signal analysis, introduction to the Monte Carlo method. Simulation: equilibrium case and capacitive device properties, linear and non-linear region, breakthrough. Static and dynamic properties, frequency response. Unipolar and bipolar devices, heterostructure devices, sub-circuits, coupling with circuit simulation, coupling with process simulation, simulation environment, Technology-CAD, optimization.

## Teaching methods

Lectures, simulation exercises and presentation of results.

## Mode of examination

Oral

Preliminary discussion: in the first lecture on 11. March 2024

Time: Monday, 9:15-11:00am

Place: CD0520

In order to attend the lecture, a registration in TISS is required.

## Course dates

DayTimeDateLocationDescription
Mon09:15 - 11:0011.03.2024 - 24.06.2024 CD0520Termine
Device Modeling - Single appointments
DayDateTimeLocationDescription
Mon11.03.202409:15 - 11:00 CD0520Termine
Mon18.03.202409:15 - 11:00 CD0520Termine
Mon08.04.202409:15 - 11:00 CD0520Termine
Mon22.04.202409:15 - 11:00 CD0520Termine
Mon29.04.202409:15 - 11:00 CD0520Termine
Mon06.05.202409:15 - 11:00 CD0520Termine
Mon13.05.202409:15 - 11:00 CD0520Termine
Mon27.05.202409:15 - 11:00 CD0520Termine
Mon03.06.202409:15 - 11:00 CD0520Termine
Mon10.06.202409:15 - 11:00 CD0520Termine
Mon17.06.202409:15 - 11:00 CD0520Termine
Mon24.06.202409:15 - 11:00 CD0520Termine

## Examination modalities

Oral examination after positive review of the practical part - registration in TISS.

## Course registration

Begin End Deregistration end
22.02.2024 12:00 15.03.2024 12:00 29.03.2024 11:00

## Curricula

Study CodeObligationSemesterPrecon.Info
066 434 Materials Sciences Not specified
066 439 Microelectronics Not specified2. Semester
066 507 Telecommunications Mandatory2. Semester
066 508 Microelectronics and Photonics Mandatory2. Semester

## Literature

Lecture notes for this course will be made available.

German