360.033 Device Modeling
This course is in all assigned curricula part of the STEOP.
This course is in at least 1 assigned curriculum part of the STEOP.

2021S, VU, 2.0h, 3.0EC
TUWEL

Properties

  • Semester hours: 2.0
  • Credits: 3.0
  • Type: VU Lecture and Exercise
  • Format: Distance Learning

Learning outcomes

After successful completion of the course, students are able to

  • describe the physical and mathematical basics of numerical device simulation.
  • apply the most important numerical methods like discretization, Newton’s method and equation solvers.
  • qualitatively estimate the validity of various transport models.
  • implement  software for the numerical simulation of elementary devices.

Subject of course

The electrical behavior of modern semiconductor devices can only be qualitatively modeled using analytical models. To obtain better descriptions the semiconductor device equations have to be solved numerically on a suitable simulation grid. This course focuses on the basic physical and mathematical issues. Practical experience can be gathered using a real device simulator. Modeling: Boltzmann's equation, moment method, drift-diffusion and energy-transport models. Boundary conditions, contacts, interfaces and heterostructures. Self heating and the heat flow equation, thermal boundary conditions. Band structure, strain effects, modeling of semiconductor alloys, mobility, scattering, channel quantization. Numerical methods: discretization of partial differential equations (finite difference and box-integration method), damping and convergence of Newton's method, linearized small-signal analysis, introduction to the Monte Carlo method. Simulation: equilibrium case and capacitive device properties, linear and non-linear region, breakthrough. Static and dynamic properties, frequency response. Unipolar and bipolar devices, heterostructure devices, sub-circuits, coupling with circuit simulation, coupling with process simulation, simulation environment, Technology-CAD, optimization.

Teaching methods

Lectures, simulation exercises and presentation of results.

Mode of examination

Oral

Additional information

Preliminary discussion: in the first lecture on 1. März 2021

Time: Monday, 9:15-11:00am

Place: Online

In order to attend the lecture, a registration in TISS is required.

 

Lecturers

Institute

Course dates

DayTimeDateLocationDescription
Mon09:15 - 11:0001.03.2021 - 14.06.2021 Zoom (LIVE)Termine
Device Modeling - Single appointments
DayDateTimeLocationDescription
Mon01.03.202109:15 - 11:00 ZoomTermine
Mon08.03.202109:15 - 11:00 ZoomTermine
Mon15.03.202109:15 - 11:00 ZoomTermine
Mon22.03.202109:15 - 11:00 ZoomTermine
Mon12.04.202109:15 - 11:00 ZoomTermine
Mon19.04.202109:15 - 11:00 ZoomTermine
Mon26.04.202109:15 - 11:00 ZoomTermine
Mon03.05.202109:15 - 11:00 ZoomTermine
Mon10.05.202109:15 - 11:00 ZoomTermine
Mon17.05.202109:15 - 11:00 ZoomTermine
Mon31.05.202109:15 - 11:00 ZoomTermine
Mon07.06.202109:15 - 11:00 ZoomTermine
Mon14.06.202109:15 - 11:00 ZoomTermine

Examination modalities

Oral examination after positive review of the practical part - registration in TISS.

Course registration

Begin End Deregistration end
15.02.2021 15:00 10.03.2021 23:59 10.04.2021 23:59

Curricula

Literature

Lecture notes for this course will be made available.

Miscellaneous

Language

German