360.033 Device Modeling This course is in all assigned curricula part of the STEOP.\$(function(){PrimeFaces.cw("Tooltip","widget_j_id_1y",{id:"j_id_1y",showEffect:"fade",hideEffect:"fade",target:"isAllSteop"});});This course is in at least 1 assigned curriculum part of the STEOP.\$(function(){PrimeFaces.cw("Tooltip","widget_j_id_20",{id:"j_id_20",showEffect:"fade",hideEffect:"fade",target:"isAnySteop"});});

2019S, VU, 2.0h, 3.0EC

Properties

• Semester hours: 2.0
• Credits: 3.0
• Type: VU Lecture and Exercise

Aim of course

Fundamental knowledge of device simulation, qualitative understanding of the limitations of the various transport models, modeling choices for the physical parameters, overview of the most important numerical methods like discretization, Newton method, equation solvers, application of the methods to devices (diodes, bipolar and MOS transistors) using a real device simulator.

Subject of course

The electrical behavior of modern semiconductor devices can only be qualitatively modeled using analytical models. To obtain better descriptions the semiconductor device equations have to be solved numerically on a suitable simulation grid. This course focuses on the basic physical and mathematical issues. Practical experience can be gathered using a real device simulator. Modeling: Boltzmann's equation, moment method, drift-diffusion and energy-transport models. Boundary conditions, contacts, interfaces and heterostructures. Self heating and the heat flow equation, thermal boundary conditions. Band structure, strain effects, modeling of semiconductor alloys, mobility, scattering, channel quantization. Numerical methods: discretization of partial differential equations (finite difference and box-integration method), damping and convergence of Newton's method, linearized small-signal analysis, introduction to the Monte Carlo method. Simulation: equilibrium case and capacitive device properties, linear and non-linear region, breakthrough. Static and dynamic properties, frequency response. Unipolar and bipolar devices, heterostructure devices, sub-circuits, coupling with circuit simulation, coupling with process simulation, simulation environment, Technology-CAD, optimization.

Vorbesprechung: im Rahmen der ersten Vorlesung am 4. März 2019

Zeit: Montag, 9:15-11:00

Ort: Seminarraum des Institutes für Mikroelektronik, CD 0520.

Für eine Teilnahme an der Lehrveranstaltung ist eine Anmeldung in TISS erforderlich.

Course dates

DayTimeDateLocationDescription
Mon09:15 - 11:0004.03.2019 - 24.06.2019 CD 0520VU
Device Modeling - Single appointments
DayDateTimeLocationDescription
Mon04.03.201909:15 - 11:00 CD 0520VU
Mon11.03.201909:15 - 11:00 CD 0520VU
Mon18.03.201909:15 - 11:00 CD 0520VU
Mon25.03.201909:15 - 11:00 CD 0520VU
Mon08.04.201909:15 - 11:00 CD 0520VU
Mon29.04.201909:15 - 11:00 CD 0520VU
Mon06.05.201909:15 - 11:00 CD 0520VU
Mon13.05.201909:15 - 11:00 CD 0520VU
Mon27.05.201909:15 - 11:00 CD 0520VU
Mon03.06.201909:15 - 11:00 CD 0520VU
Mon17.06.201909:15 - 11:00 CD 0520VU
Mon24.06.201909:15 - 11:00 CD 0520VU

Examination modalities

Oral test after positive review of the practical part - registration in TISS.

Course registration

Begin End Deregistration end
11.02.2019 15:00 06.03.2019 23:59 06.04.2019 23:59

Literature

Lecture notes for this course will be made available.

German