Fundamental knowledge of device simulation, qualitative understanding of the limitations of the various transport models, modeling choices for the physical parameters, overview of the most important numerical methods like discretization, Newton method, equation solvers, application of the methods to devices (diodes, bipolar and MOS transistors) using a real device simulator.
The electrical behavior of modern semiconductor devices can only be qualitatively modeled using analytical models. To obtain better descriptions the semiconductor device equations have to be solved numerically on a suitable simulation grid. This course focuses on the basic physical and mathematical issues. Practical experience can be gathered using a real device simulator. Modeling: Boltzmann's equation, moment method, drift-diffusion and energy-transport models. Boundary conditions, contacts, interfaces and heterostructures. Self heating and the heat flow equation, thermal boundary conditions. Band structure, strain effects, modeling of semiconductor alloys, mobility, scattering, channel quantization. Numerical methods: discretization of partial differential equations (finite difference and box-integration method), damping and convergence of Newton's method, linearized small-signal analysis, introduction to the Monte Carlo method. Simulation: equilibrium case and capacitive device properties, linear and non-linear region, breakthrough. Static and dynamic properties, frequency response. Unipolar and bipolar devices, heterostructure devices, sub-circuits, coupling with circuit simulation, coupling with process simulation, simulation environment, Technology-CAD, optimization.
Vorbesprechung: im Rahmen der ersten Vorlesung am 6. März 2017
Zeit: Montag, 9:15-11:00
Ort: Seminarraum des Institutes für Mikroelektronik, CD 0520.
Für eine Teilnahme an der Lehrveranstaltung ist eine Anmeldung in TISS erforderlich.
