After successful completion of the course, students are able to independently gain knowledge about the state-of-the-art of a certain part of circuit design with extreme short-channel MOSFETs with structur sizes of about and below 100nm. They are able to analyze different approaches and present their conclusions.

Solving small tasks in circuit design with extreme short-channel MOSFETs with structur sizes of about and below 100nm: methods for gain enhancement for low Early voltages, cascaded amplifiers, OPAMPs, compensation methodes, comparators, filters, PGAs, digital circuits for gate tunnel leakage currents

Students get a certain topic in the area of nanomter circuit design. They independently study and present it.

The presentation will be the foundation of the grading.

The lecture "Circuit Design" (5th semester) is necessary. It would be good to have visited the lecture "Analog Integrated Circuits" or "Design of Integrated Circuits", this is however not mandatory.